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NSR database version of May 3, 2024.

Search: Author = I.J.Baumvol

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1996BB22      Nucl.Instrum.Methods Phys.Res. B118, 499 (1996)

I.J.R.Baumvol, L.Borucki, J.Chaumont, J.-J.Ganem, O.Kaytasov, N.Piel, S.Rigo, W.H.Schulte, F.C.Stedile, I.Trimaille

Isotopic Tracing of Si During Thermal Growth of Si₃N₄ Ultrathin Films

NUCLEAR REACTIONS ²⁹Si(p, γ), E ≈ 324 keV; measured Eγ, Iγ; deduced σ.

doi: 10.1016/0168-583X(95)01478-0
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1995RO28      Z.Phys. A353, 127 (1995)

C.Rolfs, I.J.R.Baumvol

Characterisation of Ultrathin Dielectric Films with Ion Beams

NUCLEAR REACTIONS, ICPND ²H(³He, p), E=700 keV; measured Ep. ¹H(¹⁵N, α), E ≈ 6.36-6.44 MeV; ¹⁵N, ¹⁸O(p, α), E ≈ resonance; ¹⁶O(d, pγ), E=0.4-1.8 MeV; measured σ(E). ¹²C(d, pγ), E=2.2 MeV; ¹⁴N(d, pγ), E=2 MeV; ¹⁶O(d, pγ), E=1.8 MeV; measured Eγ, Iγ. Ultrathin dielectric films with ion beams.

doi: 10.1007/BF01295890
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1994BA86      Nucl.Instrum.Methods Phys.Res. B85, 326 (1994)

G.Battistig, G.Amsel, I.Trimaille, J.-J.Ganem, S.Rigo, F.C.Stedile, I.J.R.Baumvol, W.H.Schulte, H.W.Becker

High Resolution Low Energy Resonance Depth Profiling of ¹⁸O in Near Surface Isotopic Tracing Studies

NUCLEAR REACTIONS ¹⁸O(p, α), E ≈ resonance; measured σ(E); deduced Si oxidation processes features. Depth profiling of ¹⁸O, near surface isotopic training.

doi: 10.1016/0168-583X(94)95837-8
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1994ST13      Nucl.Instrum.Methods Phys.Res. B85, 248 (1994)

F.C.Stedile, I.J.R.Baumvol, J.-J.Ganem, S.Rigo, I.Trimaille, G.Battistig, W.H.Schulte, H.W.Becker

IBA Study of the Growth Mechanisms of Very Thin Silicon Oxide Films: The effect of wafer cleaning

NUCLEAR REACTIONS ^16,18O(α, α), E=1.8 MeV; measured Rutherford backscattering spectra; deduced very thin Si oxide films growth mechanisms features. Isotopic profiles from ion beam analysis methods.

doi: 10.1016/0168-583X(94)95821-1
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