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NSR database version of April 29, 2024.

Search: Author = Y.T.Yang

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2018ZH59      Sci. Rep. 8, 4121 (2018)

L.Q.Zhang, C.H.Zhang, J.J.Li, Y.C.Meng, Y.T.Yang, Y.Song, Z.N.Ding, T.X.Yan

Damage to epitaxial GaN layer on Al₂O₃ by 290-MeV ²³⁸U³²⁺ ions irradiation

NUCLEAR REACTIONS Ga, N(²³⁸U, X), E=290 MeV; measured reaction products; deduced the nano-hillocks, Al, O, and C elements appear on the GaN surface, along with a spiral-like, layered volcanic-cone structure formed at the highest-fluence irradiation, dislocation density increase, no N and Ga vacancies. Atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and Raman scattering spectroscopy.

doi: 10.1038/s41598-018-22321-w
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