NSR Query Results
Output year order : Descending NSR database version of April 29, 2024. Search: Author = L.Q.Zhang Found 1 matches. 2018ZH59 Sci. Rep. 8, 4121 (2018) L.Q.Zhang, C.H.Zhang, J.J.Li, Y.C.Meng, Y.T.Yang, Y.Song, Z.N.Ding, T.X.Yan Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation NUCLEAR REACTIONS Ga, N(238U, X), E=290 MeV; measured reaction products; deduced the nano-hillocks, Al, O, and C elements appear on the GaN surface, along with a spiral-like, layered volcanic-cone structure formed at the highest-fluence irradiation, dislocation density increase, no N and Ga vacancies. Atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and Raman scattering spectroscopy.
doi: 10.1038/s41598-018-22321-w
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