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NSR database version of April 11, 2024.

Search: Author = M.Chubarov

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2008JA03      Phys.Rev. C 77, 044601 (2008)

H.Jaderstrom, Yu.Murin, Yu.Babain, M.Chubarov, V.Pljuschev, M.Zubkov, P.Nomokonov, N.Olsson, J.Blomgren, U.Tippawan, L.Westerberg, P.Golubev, B.Jakobsson, L.Geren, P.-E.Tegner, I.Zartova, A.Budzanowski, B.Czech, I.Skwirczynska, V.Kondratiev, H.H.K.Tang, J.Aichelin, Y.Watanabe, K.K.Gudima

200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics

NUCLEAR REACTIONS 1H, 2H(28Si, X), E=200, 300 MeV/nucleon; measured σ, σ(θ). He, 12,14N, 16O, 18F, 20Ne, 22Na, 24Mg, 26Al, 28Si; measured momentum distributions, angular distributions; deduced single-event effects in microelectronics.

doi: 10.1103/PhysRevC.77.044601
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Data from this article have been entered in the EXFOR database. For more information, access X4 datasetO1658.


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