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NSR database version of May 19, 2024.

Search: Author = G.J.Kemerink

Found 3 matches.

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1983KE14      Hyperfine Interactions 14, 37 (1983)

G.J.Kemerink, H.de Waard, L.Niesen, D.O.Boerma

Mossbauer Spectroscopy of Laser Annealed Tellurium Implanted Silicon (I). ¹¹⁹Sn and ¹²⁵Te

NUCLEAR REACTIONS ¹¹⁹Sn(γ, γ), E=23.8 keV; ¹²⁵Te(γ, γ), E=3.55 keV; measured Mossbauer spectra; deduced isomer shift with respect to SnTe. Laser annealed Te implanted Si, transmission technique, isomer excitation by parent decay.

doi: 10.1007/BF02098294
Citations: PlumX Metrics

1983KE15      Hyperfine Interactions 14, 53 (1983)

G.J.Kemerink, H.de Waard, L.Niesen, D.O.Boerma

Mossbauer Spectroscopy of Laser Annealed Tellurium Implanted Silicon(II). ¹²⁹I

NUCLEAR REACTIONS ¹²⁹I(γ, γ), E=27.78 MeV; measured Mossbauer spectra; deduced doping, charge state dependences.

doi: 10.1007/BF02098295
Citations: PlumX Metrics

1979KE09      Hyperfine Interactions 7, 339 (1979)

G.J.Kemerink, S.Bukshpan, H.de Waard

Mossbauer Studies of ⁸³Kr Implanted in Semiconductors and Metals

NUCLEAR REACTIONS ⁸³Kr(γ, γ), E=9.4 MeV; measured Mossbauer spectra; deduced line widths, isomer shift, quadrupole splitting. Rb source implanted in diamond, Si, Ge, Sn, Cu, Ag, Au, Mo, W.

doi: 10.1007/BF01021517
Citations: PlumX Metrics