NSR Query Results
Output year order : Descending NSR database version of April 27, 2024. Search: Author = H.Jaderstrom Found 3 matches. 2008GO20 Nucl.Phys. A806, 216 (2008) P.Golubev, V.Avdeichikov, K.G.Fissum, B.Jakobsson, I.A.Pshenichnov, W.J.Briscoe, G.V.O'Rielly, J.Annand, K.Hansen, L.Isaksson, H.Jaderstrom, M.Karlsson, M.Lundin, B.Schroder, L.Westerberg Pion emission in 2H, 12C, 27Al(γ, π+) reactions at threshold NUCLEAR REACTIONS 2H, 12C, 27Al(γ, π+X), E=176 MeV; measured σ, σ(θ, E). Comparison with other data and intranuclear cascade model.
doi: 10.1016/j.nuclphysa.2008.02.308
2008JA03 Phys.Rev. C 77, 044601 (2008) H.Jaderstrom, Yu.Murin, Yu.Babain, M.Chubarov, V.Pljuschev, M.Zubkov, P.Nomokonov, N.Olsson, J.Blomgren, U.Tippawan, L.Westerberg, P.Golubev, B.Jakobsson, L.Geren, P.-E.Tegner, I.Zartova, A.Budzanowski, B.Czech, I.Skwirczynska, V.Kondratiev, H.H.K.Tang, J.Aichelin, Y.Watanabe, K.K.Gudima 200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics NUCLEAR REACTIONS 1H, 2H(28Si, X), E=200, 300 MeV/nucleon; measured σ, σ(θ). He, 12,14N, 16O, 18F, 20Ne, 22Na, 24Mg, 26Al, 28Si; measured momentum distributions, angular distributions; deduced single-event effects in microelectronics.
doi: 10.1103/PhysRevC.77.044601
2007JA06 Phys.Lett. B 644, 228 (2007) B.Jakobsson, P.Golubev, H.Jaderstrom, V.Avdeichikov, L.Carlen, L.Westerberg Probing the liquid-gas coexistence in p + Xe reactions from 200 to 1400 MeV NUCLEAR REACTIONS Xe(p, X), E=200-1400 MeV; measured fragment yields, charge distribution, nuclear matter temperature, caloric parameters; deduced nuclear equation of state features. Cascade plus statistical multifragmentation model.
doi: 10.1016/j.physletb.2006.11.049
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