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NSR database version of May 8, 2024.

Search: Author = A.Markwitz

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1996MI28      Nucl.Instrum.Methods Phys.Res. B108, 62 (1996)

R.W.Michelmann, H.Baumann, A.Markwitz, J.D.Meyer, K.Bethge

Investigation of Ultra Thin SiN(x)O(y) Layers Produced by Low-Energy Ion Implantation with NRA and Channeling-RBS

NUCLEAR REACTIONS ¹⁸O(p, α), E=152 keV; measured α spectra; ¹⁵N(p, αγ), E=429 keV; measured γ spectra; deduced implanted ions depth profile in Si.

doi: 10.1016/0168-583X(95)01047-5
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