51V 51TI B- DECAY 1976BEXW,1974HEYW,1969HA4617NDS 201709
51V H TYP=FUL$AUT=Wang Jimin and Huang Xiaolong$CIT=NDS 144, 1 (2017)$
51V 2 H CUT=1-Mar-2016$
51V c Others: 1970Si21, 1962We06, 1955Bu01
51V c Source generally produced by {+50}Ti(n,|g) and {+51}V(n,p).
51V c 1974HeYW: E|g, I|g measured with Ge(Li).
51V c 1976BeXW: |b|g and |g|g coin measured. Deduced T{-1/2}.
51V c 1969Ha46: E|g, I|g, |g|g coin, and |g|g(|q) measured with Ge(Li) and
51V 2c NaI. Deduced levels.
51V cB $For |b Fermi plot measurement see 1955Bu01 and 1955Ma01.
51V cL $For |b|g(t) measurement see 1970Si21, 1976BeXW and 1962We06.
51V cL $For |g|g(t) measurement see 1976BeXW and 1958Su54.
51V cG $For |g|g(|q) measurement see 1969Ha46 and 1963Ro15.
51V cB $For |b|g measurement see 1955Bu01, 1976BeXW and 1970Si21.
51V cB IB$From intensity imbalance at each level.
51V cG $For |g|g measurement see 1969Ha46, 1963Ro15 and 1976BeXW.
51V cL E$From decay scheme and E|g's, using least-squares fit to data.
51V cL J$From Adopted Levels
51V cL T$From Adopted Levels.
51V cG E$From 1974HeYW.
51V cG RI$Relative photon intensities normalized to I|g(320|g)=100
51V 2cG (1974HeYW).
51V cG M,MR$From adopted |g radiations. |d phase convention of 1970Kr03.
51TI P 0.0 3/2- 5.76 M 1 2471.0 6
51V N 0.931 4 1 1
51V cN NR$Based on |SI|g(to g.s.)=100
51V PN 0.931 4 1.0 3
51V L 0.0 7/2- STABLE
51V L 320.077 6 5/2- 184 PS 6
51V G 320.076 6 100 M1+E2 +0.47 3 0.00188 C
51V S G KC=0.00168$LC=0.00016
51V B 91.9 4 4.8979 21
51V S B EAV=890.55 29
51V L 928.63 4 3/2- 8.7 PS 8
51V G 608.55 5 1.27 10 M1+E2 +6.8 8 0.00054 C
51V S G KC=0.00048
51V cG $|g(|q): A{-2}=0.075 {I24}, A{-4}=-0.029 {I28} (1969Ha46);
51V 2cG A{-2}=0.013 {I30}, A{-4}=-0.03 {I5} (1963Ro15)
51V G 928.63 6 7.4 4 E2
51V S G KC=0.00015
51V B 8.1 4 5.355 22
51V S B EAV=608.99 28