50TI 50V EC DECAY (2.65E+17 Y) 2019LA09,2011DO08,1989SI0719NDS 201906
50TI H TYP=FUL$AUT=Jun Chen and Balraj Singh$CIT=NDS 157, 1 (2019)$
50TI2 H CUT=15-Apr-2019$
50TI c 2019La09: {+50}V sample was produced from vanadium flakes by multifold
50TI2c electron beam melting (EBM) at the Gran Sasso Underground Laboratory
50TI3c (LNGS). The |g rays were detected with ultra-low background (ULB) HPGe
50TI4c detectors. Measured activities. Deduced parent partial half-life.
50TI c 2011Do08: natural 255.82 g {+50}V sample measured for 97.8 d (total
50TI2c detector mass measuring time product=185.8 kg.d). Ultralow background
50TI3c Ge-detector (ULB detector) at the underground laboratory for dosimetry
50TI4c and spectrometry of the PTB in Germany. Detector calibrated with
50TI5c solutions of known activity provided by PTB. Results corrected for
50TI6c contaminations from {+238}U and {+232}Th, mass of water (determined at
50TI7c PTB) and oxygen (determined at German Federal Institute for Materials
50TI8c Research) in sample resulting from exposure to air subtracted when
50TI9c calculating activity concentration. Measured partial half-life of
50TIAc {+50}V |e decay
50TI c 1989Si07: measured 1554|g and deduced T{-1/2}(|e); three large Ge
50TI2c detectors in a salt mine; 337.5 g of natural V, 1109 h and a background
50TI3c run of 4206 h; corrections were made for Th and U contaminants.
50TI c 1985Si02 (same group as 1989Si07): measured 1554|g and deduced
50TI2c T{-1/2}(|e); intrinsic Ge; 100.6 g of natural V, 193.3 h and background
50TI3c run of 100 d; correction for U contaminants.
50TI c 1984Al10: measured 1554|g and deduced T{-1/2}(|e); Ge(HP); 4250 g of
50TI2c natural V, 135.5 d.
50V P 0.0 6+ 2.65E+17 Y+16-18 2207.6 4
50V cP J,T$From {+50}V Adopted levels
50V cP QP$From 2017Wa10
50TI N 1.0 0.993 7 1.007
50TI cN NR$From I|g(1554|g)=100. From Q(|e) only the g.s. and 1554
50TI2cN state may be populated. |DJ=6, |D|p=no to g.s. and |DJ=4, |D|p=no to
50TI3cN 1554 state; therefore, only the 1554 state is expected to be fed in
50TI4cN this decay
50TI cN BR$%|e=99.3 {I7} based on %|e>98.6 deduced from
50TI2cN T{-1/2}(|e+|b{++})=2.67|*10{+17} y {I+16-18} (68% confidence interval)
50TI3cN and T{-1/2}(|b{+-})>1.9|*10{+19} y (90% confidence interval) in
50TI4cN 2019La09. Others: 96.5 {I35} based on >92.9 deduced by 2011Do08 from
50TI5cN non-observation of |b{+-} decay activity through the 783|g in {+52}Cr;
50TI6cN %|e=83 {I11} in 1989Si07 was based on observed %|b{+-}=17 {I11}. No
50TI7cN |b{+-} decay has yet been confirmed, as e.g. in 2019La09 and 2011Do08.
50TI8cN See also comment for {+50}V g.s. in Adopted Levels
50TI PN 4
50TI L 0.0 0+
50TI L 1553.77 6 2+
50TI cL J$from the Adopted Levels.
50TI E 99.3 7 23.63 6
50TIS E CK=0.8925$CL=0.09170$CM+=0.01581
50TI cE IE$deduced from partial T{-1/2} of |e and |b{+-} decay modes in
50TI2cE 2019La09. Others: %|e>92.9 measured by 2011Do08 from observation of no
50TI3cE |b{+-} activity; %|e=83 {I11} (1989Si07).
50TI cE LOGFT$calculated for allowed decay
50TI G 1553.77 6 100 E2
50TI cG E$from 1984Al10
50TI cG M$from the Adopted Gammas