201FR    205AC A DECAY                 2014ZH03                  23NDS    202212
201FR  H TYP=FUL$AUT=F.G. KONDEV$CIT=NDS 187, 355 (2023)$CUT=20-Sep-2022$
201FR c  2014Zh03: {+205}Ac produced in the {+169}Tm({+40}Ca,4n) reaction,
201FR2c  E({+40}Ca)=196 MeV at the HIRFL facility, Lanzhou.
201FR3c  Target: 400 |mg/cm{+2} thick covered with a 10 |mg/cm{+2}-thick carbon
201FR4c  layer. Evaporation residues were separated in flight using SHANS recoil
201FR5c  separator, and implanted into position sensitive DSSD (48 vertical
201FR6c  strips of 3 mm width). Eight non-position sensitive Si detectors
201FR7c  were used to detect escaping |a particles. Measured:
201FR8c  recoil-|a{-1}(t)-|a{-2}(t)-|a{-3}(t) correlated events. Deduced:
201FR9c  E|a and half-life of {+205}Ac
201FR cA HF$Using r{-0}=1.4957 {I15}, unweighted average of r{-0}=1.4803 {I16}
201FR2cA for {+200}Po and 1.511 {I5} for {+202}Rn in 2020Si16
201FR cL J,T$From Adopted Levels
205AC  P 0               9/2-             20 MS  +97-9           8090     60
205AC cP E,J$From 2021Ko07
205AC cP T$From 7935|a(t) in 2014Zh03
205AC cP QP$From 2021Wa16
201FR  N                         1     AP
201FR cN BR$From 2021Ko07
201FR  L 0             9/2-            63 MS     4
201FR  A  7935     30   100  AP  2     AP
201FR cA E,IA$From 2014Zh03.  E|a1=7935 keV {I30} correlated with E|a2=7406
201FR2cA keV {I30} ({+201}Fr) and E|a3=6997 keV {I30} ({+197}At)