178OS    182PT A DECAY                 1966SI08                  09NDS    200907
178OS  H TYP=FUL$AUT=E. Achterberg, O.A. Capurro, G.V. Marti$
178OS2 H CIT=NDS 110, 1473 (2009)$CUT=31-May-2008$
178OS C
182PT  P 0.0          0+               2.2 M     1              4952      5
182PT CP           T from 1972Fi12, other: 3.0 M {I2} (1966Si08), 2.5 M {I5}
182PTxCP (1963Gr08); Q(|a) from 2003Au03; branching from 1995Bi01,
182PTxCP other: %|a=0.023 {I+23-12} (1966Si08).
178OS  N                       0.00038 2
178OS  L 0.0          0+
178OS  A 4843      5  91      9 1.0
178OS cA E         from 1995Bi01. Other: 4820 {I30}
178OS2cA (1963Gr08), 4840 {I20} (1966Si08).
178OS cA IA        only one |a group at 4843 keV was observed. Intensity
178OS2cA of an |a to the 2+ state at 131.6 keV is expected to be less than
178OS3cA 17% of the |a decay; intensity of an |a to the second 0+ state at
178OS4cA 650.4 keV should be less than 0.002% of the |a decay. These I|a
178OS5cA values are estimated by requiring their HF to be greater than 1.
178OS cA HF        r{-0}({+178}Os)=1.563 {I7} is deduced from
178OSxcA HF(4843|a)=1.0, using the adopted value I|a(4843|a)=91 {I9} per 100
178OSxCA |a decays in the calculations.