178IR 182AU A DECAY 1995BI01,1979HA10 09NDS 200907
178IR H TYP=FUL$AUT=E. Achterberg, O.A. Capurro, G.V. Marti$
178IR2 H CIT=NDS 110, 1473 (2009)$CUT=31-May-2008$
178IR C
178IR C 1995Bi01: Activities produced by the bombardment of Yb (diffused into a
178IR2C C felt) with 165MeV 19F beam. Identification and measurements
178IR3C using the UNISOR on-line isotope separator. Si(Li) detectors to
178IR6C identify |a rays and electrons. Ge(Li) detectors to measure |g and
178IR7C x-rays, Si(Au) surface barrier detector to measure |a particles.
178IR8C Two Ge(Li) detectors were used to observe |g and x-rays in
178IR9C coincidence. Measured E|a, I|a, |a|g coin.,
178IR0C |a-x coin., |a-e coin., and half-lives, deduced HF.
178IR C 1979Ha10: Activity produced by protons on Pb; E=600 MeV. Measured E|a,
178IR2C I|a, |a|g coin. Detectors: semiconductors Ge(Li).
178IR CL Level and transition energies are from 1995Bi01, as well as
178IRxCL the HF estimates.
182AU P 0.0 2+ 15.5 S 4 5526 4
182AU CP J|p from 2001Ib02; T from 2003Au02; Q(|a) from 2003Au03;
182AUxCP branching from 1995Bi01.
182AU CP The half-life measurements for three |a transitions and for
182AUxCP the {+182}Au |e decay reported in 1995Bi01 lead to an average of
182AUxCP T=15.0 s {I8}.
178IR N 0.0013 5
178IR L 0.0 12 S 2
178IR CL T from adopted levels.
178IR A 5403 5 21 21
178IR L 54.4 5 (2+)
178IR CL J from the hindrance factor of the |a transition feeding this
178IRxCL level, which indicates that it has the same J|p and structure as the
178IRxCL {+182}Au g.s., for which a J|p=(2+) has been established (2001Ib02).
178IR A 5352 5 72 3
178IR CA E other value: 5353 {I10} (1979Ha10)
178IR G 54.4 5
178IR CG E from 1995Bi01
178IR L 123 7
178IR CL E from |a-particle energy differences (1995Bi01)
178IR A 5283 5 7 28