171OS 175PT A DECAY 2014PE02,1979HA10 18NDS 201808
171OS H TYP=FUL$AUT=CORAL M. BAGLIN, E.A. MCCUTCHAN$CIT=NDS 151, 334 (2018)$
171OS2 H CUT=30-Jun-2018$
171OS c 2014Pe02: {+175}Pt activity from the {+92}Mo({+86}Sr,2pn) reaction
171OS2c with E({+86}Sr)=403 MeV followed by separation using the RITU
171OS3c gas-filled spectrometer. Measured E|a, I|a, E|g, I|g, |a-|g
171OS4c coincidences using two double-sided Si strip detectors, an array of
171OS5c silicon PIN detectors, a segmented planar Ge detector and a segmented
171OS6c Clover detector.
171OS C 1979HA10: sources from decay of 179HG parent activity; measured EA,
171OS2C IA, AG coin (silicon surface-barrier detector, FWHM AP 25 KEV; GELI,
171OS3C FWHM=2.1 KEV at 1.33 MEV).
171OS C 1982DE11: sources from 63CU bombardments of indium and tin
171OS2C (E(63CU)=245-300 MEV, helium-jet transport); enriched targets;
171OS3C measured EA, IA (silicon surface-barrier detector).
171OS C 1986KE03: sources from 90ZR on YTTRIUM, ZR, and MO (E(90ZR)=321-390
171OS2C MEV); velocity-filter, evaporation-residue separation; enriched
171OS3C targets; measured EA, IA (silicon surface-barrier detector).
171OS C 1996PA01: sources from heavy-ion fusion-evaporation reactions; recoil
171OS2C mass separator, double-sided SI strip detector (FWHM LE 20 KEV);
171OS3C measured ^T{-1/2}, %A for 175PT.
171OS C Others: 1966SI08, 1970HA18, 1971HA03, 1973GA08, 1986KE03.
171OS C The decay scheme is from 2014Pe02. JPI(175PT)=(7/2-) IS ASSUMED
171OS2C BASED ON UNHINDERED DECAY TO (7/2-) 76.7 LEVEL.
171OS cA E$From 2014Pe02.
171OS CA IA$From 1979HA10, renormalized so |S(IA)=100, except where noted.
171OS CA HF$If R0=1.557 8 (from R0(170OS)=1.553 14 and R0(172OS)=1.559 10 in
171OS2CA 1998AK04).
171OS CG E$From 1979HA10.
171OS cL E$From a least-squares fit to E|g, by evaluators.
171OS cL J$From the Adopted Levels.
171OS D CC$FROM BrIcc v2.3b (16-Dec-2014) 2008Ki07, "Frozen Orbitals" appr.
175PT P 0.0 (7/2-) 2.43 S 4 6164 4
175PT cP T$weighted average of 2.38 s {I4}, 2.4 s {I3} (1996Pa01), 2.52 s
175PT2cP {I8} (1973Ga08), 2.54 s {I15}, 2.56 s {I10} (1979Ha10). Others: 2.1
175PT3cP s {I2} (1966Si08).
171OS N 0.64 5
171OS CN BR$from 1979HA10. Others: %(6038A+5960A)=57.3 11 (1986KE03),
171OS2CN %(5960A)=56 5 (1996PA01), %(5960A)=75 15 (1971HA03).
171OS L 0.0 (5/2-)
171OS A 6021 4 7.4 1241 8
171OS cA E$other: 6038 {I10} revision by 1991Ry01 of 6037 {I10} from 1979Ha10.
171OS L 76.8 3 (7/2-)
171OS G 76.7 3 M1 11.97 21
171OSX G EKC=11.6 9
171OSS G KC=9.86 18$LC=1.63 3$MC=0.375 7$NC=0.0915 17$OC=0.0158 3$
171OSS G PC=0.001174 22
171OS cG E$other: 76.4 {I10} (1979Ha10).
171OS cG M$from |a(K)exp (2014Pe02).
171OS A 5948 4 85 8 1.75 23
171OS cA E$others: 5959 {I3} (1982De11), 5963 {I5} (1979Ha10, after revision
171OS2cA by 1991Ry01), 5960 {I10} (1973Ga08), 5950 {I10} (1966Si08), 5960
171OS3cA (1970Ha18).
171OS L 207.7 4 (9/2-)
171OS G 130.8 4 M1 2.61 5
171OSX G EKC=2.1 2
171OSS G KC=2.16 4$LC=0.350 6$MC=0.0803 14$NC=0.0196 4$OC=0.00338 6$
171OSS G PC=0.000252 5
171OS cG EKC$for 130.8 + 134.4 doublet
171OS G 207.9 5
171OS A 5819 4 1.1 3 39 12
171OS cA IA$from 2014Pe02 obtained by dividing the total intensity of 7.3
171OS2cA {I16} from 1979Ha10 to the 208-211 doublet using the ratios of the
171OS3cA measured total intensities of the 130.8- and 134.1-keV |g rays.
171OS L 211.2 5 (7/2-,9/2-)
171OS G 134.4 10 M1 2.42 7
171OSX G EKC=2.1 2
171OSS G KC=2.00 6$LC=0.324 9$MC=0.0743 19$NC=0.0181 5$OC=0.00313 8$
171OSS G PC=0.000233 6
171OS cG E$other: 134.4 {I10} (1979Ha10)
171OS cG EKC$for 130.8 + 134.4 doublet
171OS G 211.2 5 0.274 6
171OS cG E$other: 211.8 {I10} (1979Ha10)
171OS A 5814 4 6.2 146.7 16
171OS cA E$other: 5831 {I10} revision by 1991Ry01 of 5830 {I10} from 1979Ha10.
171OS cA IA$from 2014Pe02 obtained by dividing the total intensity of 7.3
171OS2cA {I16} from 1979Ha10 to the 208-211 doublet using the ratios of the
171OS3cA measured total intensities of the 130.8- and 134.1-keV |g rays.