164OS    168PT A DECAY (2.02 MS)       1996BI07,1981HO10         18NDS    201712
164OS  H TYP=FUL$AUT=BALRAJ SINGH AND JUN CHEN{+#}$CIT=NDS 147, 1 (2018)$
164OS2 H CUT=30-Nov-2017$
164OS cA IA$Per 100 |a decays.
164OS cA HF$r{-0}({+164}Os)=1.554 {I17}, deduced from HF(6832|a)=1.0.
168PT  P 0.0         0+                2.02 MS   10             6990      3
168PT cP T$From {+168}Pt Adopted Levels (2010Ba27)
168PT cP QP$From 2017Wa10
164OS  N                       0.993   7
164OS cN BR$The decay branching has not been experimentally determined.
164OS2cN The gross |b calculations of 1973Ta30 give approximately 1 s for
164OS3cN partial |e+|b{++} decay half-life which corresponds to |?0.2%
164OS4cN |e+|b{++} decay branch. The calculations by 1997Mo25,
164OS5cN on the other hand, give T{-1/2}(|e decay)=148.8 ms from which one
164OS6cN obtains %|e+%|b{++}=1.3. %|a=99.3 {I7} is recommended here, and it is
164OS7cN used in calculations of the r{-0} parameter. In 2010Ba27 evaluation,
164OS8cN %|a|?100 is given in {+168}Pt Adopted Levels.
164OS  L 0.0          0+
164OS  A 6832      10  100      1.0
164OS cA E$measured E|a=6824 {I20} (1981Ho10), 6832 {I10} (1996Bi07).
164OS cA IA$only one |a group was observed. Any |a to excited
164OS2cA levels in {+164}Os is assumed negligible.