158W     162OS A DECAY (2.1 MS)        1996BI07,2000MA95,1989HO1217NDS    201712
158W   H TYP=FUL$AUT=N. NICA$CIT=ENSDF$CUT=31-DEC-2017$
158W  c  1989Ho12: produced by {+106}Cd({+58}Ni,2n).
158W  c  1996Bi07: produced by {+92}Mo({+78}Kr,x) at 357 and 384 MeV and
158W 2c  products separated in fragment mass analyzer and counted in
158W 3c  silicon strip detector.
158W  c  2000Ma95: produced by {+106}Cd({+58}Ni,x) at 270 MeV and products
158W 2c  separated in fragment mass analyzer and counted in silicon
158W 3c  strip detector.
158W  cA HF$r{-0}({+158}W)=1.5597 {I29} is calculated from HF(6602|a)=1.0
162OS  P    0.0       0+               2.1 MS    1              6767      3
162OS cP T$From {+162}Os Adopted Levels, Gammas dataset (2007Re16),
162OS2cP weighted average of 1.9 ms {I2} (2000Ma95, |a(t)) and 2.1 ms
162OS2cP {I1} (2004Jo12, |a(t)). Others: 1.5 ms {I+7-5}, (1996Bi07, |a(t)); and
162OS2cP 1.9 ms {I7}, (1989Ho12, |a(t)).
162OS cP QP$From 2017Wa10
158W   N                       1.0
158W   L    0.0       0+
158W 2 L %A=100
158W   A   6602    4    100     1.0
158W  cA E$weighted average of 6611 {I30} (1989Ho12), 6619 {I10}
158W 2cA (1996Bi07), and 6600 {I3} (2000Ma95).
158W  cA IA$only one |a branch is reported.