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NSR database version of May 22, 2024.

Search: Author = J.S.Zhou

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1992WA35      Phys.Lett. 166A, 361 (1992)

K.-M.Wang, B.-R.Shi, X.-D.Liu, T.-B.Xu, P.-R.Zhu, J.-S.Zhou, Q.-T.Zhao

Damage Profiles in Silcon Induced by 1.0 MeV Ti Ions at Tilted Angle Incidence

NUCLEAR REACTIONS Si(α, α), E=2.1 MeV; measured Rutherford back scattering yields. Random <100> aligned Si crystal damaged by 2 MeV Ti ions.

doi: 10.1016/0375-9601(92)90723-Y
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