Abstract
A detailed -decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the intruder state in Bi was determined. The decay of the Bi (9/2 ground state to the level at 284 keV was observed for the first time. In addition, the decay of Bi was remeasured. Reduced widths for the decays of odd- Bi nuclei to states in their Tl daughters are discussed.
- Received 26 August 1996
DOI:https://doi.org/10.1103/PhysRevC.55.1192
©1997 American Physical Society