Peculiarities of the 16O(α, α)16O 3.045 Me V resonance scattering and its application to investigation of oxygen in silicon
References (29)
- et al.
Nucl. Instr. and Meth.
(1983) - et al.
Nucl. Instr. and Meth.
(1990) - et al.
Thin Solid Films
(1973) - et al.
Nucl. Instr. and Meth.
(1979) - et al.
Thin Solid Films
(1979) - et al.
Nucl. Instr. and Meth.
(1981) - et al.
Nucl. Instr. and Meth.
(1986) - et al.
Nucl. Instr. and Meth.
(1988) - et al.
Nucl. Instr. and Meth.
(1988) - et al.
Nucl. Instr. and Meth.
(1989)
Nucl. Instr. and Meth.
(1991)
Phys. Rev.
(1953)
Nucl. Instr. and Meth.
(1978)
Ann. Rev. Nucl. Part. Sci.
(1984)
Cited by (10)
On the traceably accurate voltage calibration of electrostatic accelerators
2015, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsEnergy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film
2013, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :Calibration of the beam energy was not directly conducted, but we estimated the proton beam energy by checking the terminal voltage of the accelerator. The terminal voltage of the accelerator was checked by using 16O(α, α)16O resonant elastic scattering near 3.04 MeV [8,9], assuming the resonance at 3.037 MeV, which was obtained by the calculation with SigmaCalc software [10]. The terminal voltage that exhibited the resonant elastic scattering was 7 kV higher than that expected from the resonance energy of 3.037 MeV.
Quantitative analysis of the oxygen content in TiO<inf>2</inf> films deposited by electron-beam evaporation using <sup>16</sup>O(α, α)<sup>16</sup>O resonant elastic scattering
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2002, Surface and Coatings TechnologyEnergy levels of light nuclei, A = 20
1998, Nuclear Physics A
- 1
Lebedev Physical Institute, Moscow, Russian Federation.
- 2
Institute of Semiconductors, Kiev, Ukraine.
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