Methodology for resonance depth profiling with target tilting applied to the 3.045 MeV 16O(α, α)16O resonance

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Abstract

Resonance scanning is often used as a complement to conventional RBS for quantitative depth profiling of light-Z elements in high-Z substrates. To extend the applicability of resonance profiling to very shallow layers, formed by low-energy implantation during sputter profiling, target tilting is considered. Tilting the target with respect to the incident beam enhances the “sampling” capabilities of the method. The influence of tilting upon the spectral shape of the resonant signal is discussed. Examples are given for the profiling of oxygen in a 204 Å SiO2 film with the 3.045 MeV 16O(α, α)16O resonance.

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