Evaluation of passivated ion implanted planar silicon detectors for the spectroscopy and assay of low energy electrons

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Abstract

The passivated ion implanted planar silicon (IIPS) detector is, in comparison to other semiconductor charged particle detectors such as the silicon surface barrier (SSB) detector, characterised by a thin entrance window and by low leakage current and hence low electronic noise. For the detection of low energy electrons (≲ 200 keV) it has, therefore, the potential of superior sensitivity and energy resolution. Measurements have been made at room temperature with an IIPS and a SSB detector of similar specifications of the continuous β spectra from a 14C source (maximum energy: 156 keV) and of the line spectra from the conversion electrons of a 99mTc source. The sensitivity of a thin window (1.5–2.0 mg cm−2 mica) Geiger to 14C was also investigated. The leakage current, rms noise and capacitance characteristics as a function of the reverse bias voltage were studied for both semiconductor detectors. The IIPS had a sensitivity to 14C β detection 26% higher than the SSB and the IIPS with an added light-tight cover had a sensitivity essentially similar to the Geiger. For 119.5 keV conversion electrons, the IIPS had a FWHM of 10.6 keV whereas that for the SSB was 15.0 keV. The rms noise, capacitance and, in particular, leakage current values were lower for the IIPS.

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Present address and address for correspondence: Electronics, Physics and Electrical Engineering Unit, School of Engineering, Oxford Polytechnic, Oxford OX3 0BP, UK.

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