Abstract
We report the first observation of the beta decay of to the ground state and to two low-lying excited states of . Branching ratios to these states were measured, and a previously reported branch to a level near 12 MeV was confirmed. The branching ratio to the ground state is 60±10 %, and the branching ratios to the narrow level at 2.36 MeV and to the broad level near 2.9 MeV are 17±6 % and 11±5 %, respectively. Because of the three-body nature of the decay, the ions were implanted in the active volume of silicon detectors, and the total decay energies of the states in were directly measured. We compare these results to shell model calculations, to the analog decay of to , and to the (p,nB reaction. The comparison to decay indicates an asymmetry in the beta-decay matrix elements to the level larger than any such asymmetry previously observed.
- Received 7 May 1987
DOI:https://doi.org/10.1103/PhysRevC.37.766
©1988 American Physical Society