The branching ratio of the $0^{+}$ state of ${}_{}{}^{30}{}_{}{}^{}\mathrm{Si}$ at 3788 keV for decay by $e^{+}{e}^{-}$ pair emission to the $0^{+}$ ground state is measured to be (2.7 ± 0.4) × ${10}^{-3\mathrm{}}$. Combining this branching ratio with the previously measured lifetime of the state leads to an $E0\mathrm{}$ matrix element of (0.054 ± 0.009) single particle units.

NUCLEAR STRUCTURE ${}_{}{}^{30}{}_{}{}^{}\mathrm{Si}$; measured branching ratio $E0\mathrm{}$ decay 3788-keV level; deduced $E0\mathrm{}$ matrix element.

• Received 17 June 1974

DOI:https://doi.org/10.1103/PhysRevC.10.1570