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Resonance depolarization of B12 implanted in metallic and semiconductor hosts

R. E. McDonald and T. K. McNab
Phys. Rev. C 10, 946(R) – Published 1 August 1974
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Abstract

Resonance depolarization measurements have been made on B12 implanted in the semiconducting hosts silicon, germanium, and silicon carbide, and in the face-centered cubic metal hosts platinum, rhodium, palladium, gold, copper, aluminum, and sliver. The Knight shifts of B12 in the metallic hosts have been obtained by comparison of the resonant frequencies in silicon and metallic hosts. The measured Knight shifts Δμμ are: [Pt; -10(3) × 105], [Rh; 4(4) × 105], [Pd; 11(4) × 105], [Au; 54(3) × 106], [Cu; 60(6) × 105], [Al; 66(9) × 105], and [Ag; 67(3) × 105]. The effective B12 magnetic moment is determined to be 1.002 82(2)μN in Si, 1.002 91(2)μN in Ge, and 1.002 87(2)μN in SiC hosts.

NUCLEAR MOMENTS μ(B12) measured; resonance depolarization in Pt, Pd, Rh, Au, Ag, Cu, Al, Si, SiC, Ge hosts. Knight shifts measured.

  • Received 2 April 1974

DOI:https://doi.org/10.1103/PhysRevC.10.946

©1974 American Physical Society

Authors & Affiliations

R. E. McDonald and T. K. McNab

  • Nuclear Sciences Laboratory, Lockheed Palo Alto Research Laboratory, palo Alto, California 94304

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Vol. 10, Iss. 2 — August 1974

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