Decay schemes of Al30, P30, and O20

D. E. Alburger and D. R. Goosman
Phys. Rev. C 9, 2236 – Published 1 June 1974
PDFExport Citation

Abstract

Al30 was produced in the O18(O18,αpn)Al30 reaction by bombarding a Ta2 O518 target with 42-MeV O18 ions. Following transfer of the target in a shuttle system the γ-ray spectrum was measured in a Ge(Li) detector. Nine γ-ray transitions were observed in Si30 and have been fitted to an Al30 decay scheme that includes five β-ray branches to excited states of Si30. The half-life of Al30 is 3.685±0.032 sec. P30 was formed in the Si30(p,n)P30 reaction and a value of 2.499±0.008 min was obtained for its half-life. The β+ branching of P30 to the 2235-keV first excited state of Si30 was found to be (0.061±0.006)%, differing from previous results. O20, formed in the O18(O18, O16)O20 reaction, was also studied and upper limits were placed on various β-decay branches. The half-life of O20 was measured as 13.49±0.05 sec. ft values for the β decay of Al30, P30, and O20 are compared with recent theoretical calculations.

[RADIOACTIVITY Al30, P30, O20: measured T12, Iγ; deduced decay schemes, logft; compared with theory.]

  • Received 6 March 1974

DOI:https://doi.org/10.1103/PhysRevC.9.2236

©1974 American Physical Society

Authors & Affiliations

D. E. Alburger and D. R. Goosman

  • Brookhaven National Laboratory, Upton, New York 11973

References (Subscription Required)

Click to Expand
Issue

Vol. 9, Iss. 6 — June 1974

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review C

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×